advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -60v lower gate charge r ds(on) 250m fast switching characteristic i d - 2.4a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 45 /w data and specifications subject to change without n otice parameter operating junction temperature range continuous drain current 3 - 2 pulsed drain current 1 -10 total power dissipation storage temperature range -55 to 150 thermal data gate-source voltage + 20 continuous drain current 3 - 2.4 parameter rating drain-source voltage - 60 AP2311GK-HF 2.78 -55 to 150 201109091 halogen-free product 1 d d s g sot-223 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and c ost- effectiveness. the sot-223 package is designed for suface mount applicatio n, larger heatsink than so-8 and sot package.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-1.8a - - 250 m v gs =-4.5v, i d =-1.4a - - 300 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-1a - 2 - s i dss drain-source leakage current v ds =-48v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-1a - 6 - nc q gs gate-source charge v ds =-48v - 1 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3 - nc t d(on) turn-on delay time v ds =-30v - 8 - ns t r rise time i d =-1a - 5 - ns t d(off) turn-off delay time r g =3.3 - 22 - ns t f fall time v gs =-10v - 3 - ns c iss input capacitance v gs =0v - 510 - pf c oss output capacitance v ds =-25v - 50 - pf c rss reverse transfer capacitance f=1.0mhz - 40 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-1a, v gs =0v, - 30 - ns q rr reverse recovery charge di/dt=100a/s - 38 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. AP2311GK-HF 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 120 /w when mounted on min. copper pad. 2
AP2311GK-HF fig 1. typical output characteristics fig 2. typical output characteristics 20 fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 2 4 6 8 10 0 1 2 3 4 5 6 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c - 10v - 7.0v - 5.0v - 4.5v v g = - 3.0v 0 2 4 6 8 10 0 1 2 3 4 5 6 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c - 10v - 7.0v - 5.0v - 4.5v v g = - 3.0v 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -1.8 a v g =-10v 200 210 220 230 240 250 2 4 6 8 10 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = -1.4 a t a =25 o c 0 0.5 1 1.5 2 0 0.4 0.8 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
AP2311GK-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain curren t fig 12. gate charge waveform v.s. ambient temperature 4 0 2 4 6 8 10 0 4 8 12 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-1a v ds =-48v 10 130 250 370 490 610 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 120 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 0.5 1 1.5 2 2.5 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) operation in this area limited by r ds(on) q v g -4.5v q gs q gd q g charge
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